Abstract
 
Growth and analysis at the atomic scale: ALD and LEIS

Hidde H. Brongersma
 
Eindhoven University of Technology and Calipso B.V.

  
 The outermost atoms of a surface determine properties such as chemistry, growth, adhesion and electron emission. The composition of this outer layer is influenced by impurities from outside (adsorption, improper cleaning) and inside (segregation).
 
Since atomic engineering requires both synthesis and analysis at an atomic scale, the lectures will discuss:
 
- Why a surface is generally different from what you expect
- Surface modification at the atomic scale by Atomic Layer Deposition (ALD)
- Quantitative analysis of the outer surface as well as deeper layers by Low Energy Ion Scattering (LEIS).
 
The lectures with start with the principles of surface segregation, ALD and LEIS.
In the second part the emphasis will be more on applications in which the principles are applied.
Topics related to microelectronics, catalysis and energy conversion will be discussed.
 
They include:
 
- Wetting, anti-wetting
- Growth and studies of nano clusters
- Growth and analysis of ultra-thin dielectrics
- Flat and very rough surfaces