Abstract
Growth and analysis at the atomic scale: ALD and LEIS
Hidde H. Brongersma
Eindhoven University of Technology and Calipso B.V.
The outermost atoms of a surface determine properties such as
chemistry, growth, adhesion and electron emission. The composition of
this outer layer is influenced by impurities from outside (adsorption,
improper cleaning) and inside (segregation).
Since atomic engineering requires both synthesis and analysis at an
atomic scale, the lectures will discuss:
- Why a surface is generally different from what you expect
- Surface modification at the atomic scale by Atomic Layer Deposition
(ALD)
- Quantitative analysis of the outer surface as well as deeper layers by
Low Energy Ion Scattering (LEIS).
The lectures with start with the principles of surface segregation, ALD
and LEIS.
In the second part the emphasis will be more on applications in which
the principles are applied.
Topics related to microelectronics, catalysis and energy conversion will
be discussed.
They include:
- Wetting, anti-wetting
- Growth and studies of nano clusters
- Growth and analysis of ultra-thin dielectrics
- Flat and very rough surfaces
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